Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
92 (2002), S. 1431-1433
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A k⋅p model is used to theoretically investigate the energy and lattice temperature dependence of both transverse and longitudinal "curvature" electron effective masses in silicon. The temperature dependence of the carrier concentration conduction effective masses in the range of 10–550 K is also examined. Our results highlight the energy dependence of the longitudinal effective mass, usually considered to be equal to the band-edge effective mass, which varies from 0.917 to 1.6m0 when the carrier energy ranges from the bottom of the conduction band up to 1.5 eV. This energy dependence should have a significant impact on electronic transport simulations using drift–diffusion, hydrodynamic, or Monte Carlo methods, particularly for hot-carrier phenomena in microelectronic devices. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1490620
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