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Photoluminescence of a third order mode optically pumped semiconductor laser structure (2002)

Semaltianos, N. G. ; Vinter, B. ; De Rossi, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 92 (2002), S. 1262-1267

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Semiconductor lasers with third order waveguide mode emission are a promising way in which to achieve microsources of twin photons. The transport of electrons and holes in these particular structures is a critical issue. The temperature and pumping energy dependence of the photoluminescence spectra of a semiconductor structure specially designed for third order mode emission at 775 nm is studied. The analyses show that transfer of carriers from satellite double heterojunctions to the quantum well through a 140 nm Al0.50Ga0.50As barrier is very efficient, and the population inversion required for lasing is always obtained first in the quantum well rather than in the double heterojunctions at both low and room temperature. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1489093

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