Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 1922-1924
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial growth of phosphorus-doped silicon deposited at 250 °C from a radio-frequency glow discharge from SiH4 is demonstrated by high-resolution electron microscopy (HREM) and spreading resistance profile measurements. Thin epitaxial films are present at the interface between (100) Si substrates and hydrogenated amorphous silicon. After recrystallization at 700 °C, single-crystal layers are obtained, in which HREM reveals extensive twinning. The fact that epitaxial growth can take place at 250 °C in a system with a background pressure of only 5×10−6 mbar can be attributed to the presence of species in the SiH4 plasma that reduce the native oxide and the use of HF in the cleaning procedure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98301
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