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Interstitial defect reactions in silicon (1987)

Asom, M. T. ; Benton, J. L. ; Sauer, R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 256-258

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Deep level transient spectroscopy has been employed in a study of impurity-interstitial defect reactions in silicon following room-temperature electron irradiation. Three defects have been isolated and identified from their reactions and electrical properties as Cs-Ci, Ci-Oi, and Ps-Ci. The Cs-Ci, ME[(0.10), (0.17)] and Ps-Ci, ME[(0.21), (0.23), (0.27), (0.30)] defects exhibit metastable structural transformations. Our results reveal the multistructural nature and chemical reactivity of the silicon self-interstitial.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.98465

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