Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 334-336
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effective dopant concentration determined from the capacitance minimum in the high-frequency capacitance-voltage curve is related to the actual majority-carrier density profile through a simple integration formula. Based on this relationship, the nonuniform substrate doping effect on the analysis of group-III acceptor hydrogenation experiments in silicon is examined. It is found that the procedure in determining the kinetic coefficients by fitting the effective dopant concentration versus avalanche injection or annealing time curves is appropriate if the hydrogen concentration is assumed uniform throughout the semiconductor surface space-charge layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98432
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