Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 1791-1793
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hazardous contamination may appear at different steps of metal-oxide-silicon (MOS) process. It is thus important to identify the ionic species and to evaluate their concentrations. This is often studied by the means of thermally stimulated ionic current (TSIC). But up to now TSIC curve interpretations use more or less justified approximations. A new numerical technique of TSIC curves exploitation is reported. Our method is accurate because it is not based on approximations; moreover, this one is well adapted to computer processing. We present results on K+ contaminated MOS structures. Our results are compared with those obtained by other methods.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99627
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