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Correlation between electron trap density and hydrogen concentration in ultrathin rapidly reoxidized nitrided oxides (1988)

Hori, Takashi ; Iwasaki, Hiroshi ; Yoshioka, Yoshiaki ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 52 (1988), S. 736-738

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Ultrathin nitrided oxides (8 nm) were reoxidized for the first time by lamp-heated rapid thermal annealing in dry oxygen at 900–1150 °C for 15–200 s. Extensive measurements of hydrogen concentration [H] using secondary ion mass spectroscopy were performed. Electron trapping was monitored by flatband voltage shift ΔVfb under high-field stress. Both [H] and the ΔVfb decrease monotonically as reoxidation proceeds in the present experimental conditions. We have found for the first time that the ΔVfb is correlated with the [H] by a single proportional relation regardless of the fabrication condition. This fact gives evidence that the electron traps in the (reoxidized) nitrided-oxide system originate from hydrogen-containing species.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99364

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