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High-resolution focused ion beam lithography (1988)

Matsui, Shinji ; Kojima, Yoshikatsu ; Ochiai, Yukinori

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 868-870

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The resolution of focused ion beam (FIB) lithography has been studied by proximity effect measurement and fine pattern fabrication. In the proximity effect measurement, a 0.1 μm line pattern, according to the gap between square and line patterns, could be achieved. Moreover, 0.1 μm line and space poly(methylmethacrylate) patterns and 0.1 μm linewidth novolak based negative resist could be fabricated at 1×1013 and 2×1012 ions/cm2 dose by 260 keV Be++ FIB with 0.1 μm beam diameter, respectively.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100098

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