ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Cobalt-doped semi-insulating InP layers grown by low-pressure metalorganic chemical vapor deposition (LPMOCVD) have been used for the first time as a current blocking layer for 1.3 μm InGaAsP buried crescent lasers. Lasers with this cobalt-doped InP blocking layer have cw threshold currents as low as 8 mA at room temperature. This is the lowest cw threshold current yet reported for an InGaAsP laser with a semi-insulating current blocking layer. In addition, the lasers exhibit total differential quantum efficiency of 60%, high-temperature operation up to 100 °C, high output power of 30 mW/facet, and a 3-dB modulation bandwidth of 11.6 GHz. These results indicate that the cobalt-doped semi-insulating InP layer grown by LPMOCVD provides effective current blocking for high-performance lasers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99994