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Diffraction-limited-beam, high-power operation from X-junction coupled phase-locked arrays of AlGaAs/GaAs diode lasers (1988)

Botez, D. ; Hayashida, P. ; Mawst, L. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 1366-1368

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold currents are ∼300 mA. Diffraction-limited-beam operation is achieved to 2.8×threshold and ∼200 mW (front facet of devices with optimized facet coatings). The beam lobewidths remain under 1.5×diffraction limit to 6.3×threshold and 300 mW (both facets of uncoated devices). Near-field intensity patterns confirm the intrinsic stability of high-order array modes against gain spatial hole burning.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99980

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