Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 1632-1634
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1-μm-thick GaAs/AlGaAs 40-period multiple quantum well layer has been achieved by bombardment with 380 keV Ne+ ions for 1 h with the sample at 700 °C. This temperature is much lower than the annealing temperatures used in other vacancy-enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter-profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99934
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