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High-purity epitaxial indium phosphide grown by the hydride technique (1988)

McCollum, M. J. ; Kim, M. H. ; Bose, S. S. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 1868-1870

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Indium phosphide layers with electron mobilities at liquid-nitrogen temperature of 91 000–125 000 cm2 /V s and carrier concentrations of 3–6×1014 cm−3 have been routinely grown by hydride vapor phase epitaxy. This 77 K mobility is significantly higher than the best previously reported for hydride vapor phase epitaxial InP. Analysis by variable temperature Hall effect, photothermal ionization spectroscopy, photoluminescence, and magnetophotoluminescence confirms the high purity of the samples. The influence of O2 on Si incorporation (injected over the In source) has also been studied. The injected oxygen did not significantly influence the silicon donor concentration.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100483

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