Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 1923-1925
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Extended monolayer flat islands occurring at the heterointerface of metalorganic vapor phase epitaxy grown, growth interrupted Al0.5Ga0.5 As-GaAs single quantum wells are directly observed for the first time by spatially resolved cathodoluminescence (CL). CL images of growth islands with a lateral size of between 500 nm and 2 μm are shown. The photoluminescence emission peak shows splitting corresponding to exciton transitions in the growth islands of the quantum well with a difference in the well thickness of one atomic layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100346
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