Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 2182-2184
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Zn doping characteristics have been studied for In0.5(Ga1−xAlx)0.5P grown by low-pressure metalorganic chemical vapor deposition, using dimethylzinc (DMZ) as a Zn dopant source. Hole concentration decreased with increasing Al composition x. For low DMZ introduction, the Zn incorporation efficiency decreased with increasing x. For high DMZ introduction, hole concentration saturation occurred as a result of the fall in Zn electrical activity and the Zn electrical activity also decreased with increasing x.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100276
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