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Infrared double-heterostructure diode lasers made by molecular beam epitaxy of Pb1−xEuxSe (1988)

Tacke, M. ; Spanger, Beate ; Lambrecht, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 2260-2262

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Infrared (IR) diode lasers have been made by growing heterostructures or graded structures of Pb1−xEuxSe. This IV-VI ternary has a small lattice variation within the IR band-gap range. Double-heterostructure lasers with PbSe active layers were operated up to T=174 K cw and 220 K pulsed mode; they reached the highest cw operation temperature reported for this type of laser in the mid IR. Their tuning range was 7.8–5.7 μm cw. Lasers with the ternary as the active layer were operated up to the shortest wavelength of 2.88 μm at 100 K cw. At present lasers made by molecular beam epitaxy of this material cover the widest wavelength region at T〉77 K around 5 μm in cw operation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100247

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