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Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin-film and single-crystal silicon (1989)

Lur, W. ; Chen, L. J.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 1217-1219

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The growth kinetics of amorphous interlayer (a interlayer) in polycrystalline Ti films on single-crystal-silicon has been studied by cross-sectional transmission electron microscopy. The growth was found to follow a linear growth law initially in samples annealed at 350–425 °C. The activation energy of the linear growth was measured to be 1.6±0.3 eV. Maximum thicknesses of the a interlayers were measured to be of the order of 10 nm. The formation of an a interlayer was observed in samples annealed at a temperature as high as 600 °C. The formation and growth kinetics of a interlayers in Ti/Si and Ni/Zr systems are compared. Essential factors for the formation and growth of an a interlayer are discussed. The results represent the first report on the growth kinetics of an a interlayer in metal thin films on single-crystal silicon.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100720

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