Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1388-1390
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A short-period (AlGaAs)m(GaAs)n superlattice has been applied to the barrier layers in a single and a multiple quantum well structure prepared by molecular beam epitaxy in order to improve the interface quality. With a 38 A(ring) thin GaAs quantum well without employing aluminum, a low threshold current density of 260 A/cm2, a high characteristic temperature (T0) of 205 K, and a high differential quantum efficiency of 75% have been achieved in a double quantum well ridge waveguide laser diode emitting at 780 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100675
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