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Influence of hydroxyls on the adhesion of Au films to GaAs (1989)

Bardin, T. T. ; Pronko, J. G. ; Kozak, D. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 173-175

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The adhesion of Au metallization to GaAs substrates was studied as a function of the time to which freshly cleaved GaAs surfaces were exposed to de-ionized water or pure dry oxygen. It was found that the adhesion strength of Au metallization deposited on these surfaces is weakened from exposure to de-ionized water and the degradation is directly related to the length of the exposure. Exposure of the substrate surfaces to pure dry oxygen had no effect on the adhesion. The substrate surfaces were characterized as a function of exposure to these two environments and it was found that the Ga and As combine with the hydroxyl groups in the de-ionized water to form hydroxides and the As hydroxide dissolves leaving the surface As deficient. The extent of this reaction is dependent on the length of time the surface is exposed to the hydroxyl groups. Exposure of the substrate surface to pure dry oxygen results in a thin stable oxide layer.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101220

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