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Migration-enhanced epitaxy on a (111)B oriented GaAs substrate (1989)

Imamoto, H. ; Sato, F. ; Imanaka, K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 115-116

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: AlGaAs layers with a featureless specular surface morphology were grown successfully on an exactly (111)B oriented GaAs substrate by migration-enhanced epitaxy (MEE) even at growth temperatures below 500 °C. We have also observed reflection high-energy electron diffraction (RHEED) intensity oscillation of AlGaAs on a (111)B oriented substrate by MEE. The single quantum well (SQW) is prepared by MEE on a (111)B and a (100) substrate simultaneously, and the photoluminescence intensity from (111) SQW is shown to be about 50 times higher than that from (100) SQW.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102119

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