Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 2190-2192
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The ordered structure occurring in AlGaInP quaternary alloys grown on GaAs substrates by low-pressure metalorganic vapor phase epitaxy has been investigated by means of x-ray diffraction measurements. The order spot became strong as the Al content increased, and was observed only for the (1/2 ∼(1/2) 1/2) diffraction, corresponding to CuPt-type (111)B ordering. Kinematical analysis implies that the full width at half maximum of the order spot is strongly affected by the antiphase boundary, whereas the integrated intensity is not.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102057
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