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Aluminum selective area deposition on Si using diethylaluminumchloride (1989)

Sasaoka, C. ; Mori, K. ; Kato, Y. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 741-743

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Aluminum deposition on Si was studied using diethylaluminumchloride (DEAlCl) as a new Al chemical vapor deposition source. Selective area deposition was successfully achieved at substrate temperatures of 313–380 °C. The deposition rate was higher than 370 A(ring)/min. Reflectance and resistivity of the deposited films were comparable to those of the evaporated ones. Decomposition experiments suggest that DEAlCl catalytically decomposes on the Al surface, which would explain the high selectivity observed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101792

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