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Ultraviolet laser-induced low-temperature epitaxy of GaP (1989)

Sudarsan, U. ; Cody, N. W. ; Dosluoglu, T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 738-740

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: An ArF excimer laser has been used to achieve homoepitaxy of GaP at 500 °C using trimethylgallium and tertiarybutylphosphine as the precursor gases. Dependence of epitaxial growth on several parameters is examined. It is found that at 500 °C, in the presence of laser radiation, higher growth rate and superior crystalline properties of GaP are achieved compared to purely thermal growth. Electrical properties of p-n diodes fabricated via Zn doping have also been examined.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101791

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