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Ultraviolet-induced defect creation in amorphous SiO2 exposed to an O2 plasma (1990)

Devine, R. A. B. ; Francou, J-M. ; Inard, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 1549-1551

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The creation of paramagnetic defects in plasma chemical vapor deposited amorphous SiO2 exposed to a rf oxygen plasma has been studied as a function of exposure time for two plasma power densities. Unpaired Si dangling bond defects (oxygen-vacancy or oxygen-vacancy like) have been observed in densities attaining ∼4×1017 cm−3 after more than 20 min exposure. These defect levels are equivalent to 10 Mrad of 60 Co γ radiation. Ultraviolet photons in the wavelength range 250≤λ≤300 nm are shown to be responsible for the defect creation. The 130 nm O* emission is found not to be important.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103214

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