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Solid phase epitaxial growth of GaAs on Si (111) (1990)

Takano, Y. ; Kanaya, Y. ; Kawai, T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 1664-1666

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A continuous GaAs film was successfully grown on Si(111) at the initial stage (20 A(ring) growth thickness) by solid phase epitaxial growth. This growth suppressed the island formation observed with direct growth of GaAs on Si. The GaAs(111)A was obtained for the first time on Si(111) with an As prelayer deposited at 20 °C and 350 °C. The GaAs(111)B was also grown on Si(111) with an As prelayer deposited at 580 °C and 700 °C. The polarity of the (111) GaAs epitaxial film depends on the substrate temperature at which the As prelayer is deposited on Si.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103110

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