Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 854-856
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the direct imaging of Be δ-doped layers in GaAs, in the concentration range (0.5–2)×1014/cm2, comparing samples grown by gas source molecular beam epitaxy (MBE) and conventional MBE. The gas source MBE δ layers are ∼15 A(ring) wide, and at least at high concentrations, consist of clusters ∼12 A(ring) in diameter. At 2×1014 Be atoms/cm2, the MBE δ layer is an order of magnitude wider than that grown at the same temperature by gas source MBE. Our results imply that layers with Be concentrations in excess of 1021/cm3 can be fabricated by gas source MBE.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103185
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