Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 1566-1568
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ga0.5In0.5P grown lattice matched to GaAs by metalorganic chemical vapor deposition (MOCVD) exhibited domains of varying degrees of column III sublattice ordering. Continuous-wave photoluminescence spectra were single peaked and relatively narrow, but the peak wavelengths from samples grown at low (630–670 °C) temperatures varied strongly with excitation density at low measurement temperatures, while peak wavelength did not vary for high (775 °C) temperature growth. The half width was 6.5 meV in the latter case, the narrowest reported from MOCVD-grown Ga0.5In0.5P. Time-resolved photoluminescence of partially ordered GaInP at liquid-helium temperatures is reported for the first time. For samples grown at low temperatures, the spectral peak displayed a slow (τ(approximately-greater-than)1 μs) decay at low excitation density. The decay was more rapid (τ=1.8 ns) at higher excitations and at higher photon emission energies. Possible explanations discussed include spatial separation of carriers and trapping.〈squeeze;1.6p〉
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103355
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