Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 2425-2427
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have used rapid thermal processing chemical vapor deposition (RTPCVD) for silicon epitaxial growth on silicon-on-insulator (SOI) substrates. The surface morphology of SOI rapid thermal annealed in different ambients was also examined. A short, high-temperature H2 anneal formed an undulating SOI surface, which planarized after RTPCVD. However, severe surface pitting was observed after a high-temperature N2 anneal. No significant changes in the defect density of the silicon layers occurred after RTPCVD and no stacking faults were observed in the epilayers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103865
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