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Redistribution of Sb in an atomic-layer-doped Si (1991)

Fukatsu, S. ; Kubo, S. ; Shiraki, Y. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 1152-1154

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We investigated the redistribution of an atomic-layer-doped (ALD) Sb in Si upon post-growth annealing using secondary-ion mass spectrometry (SIMS). Shoulder development in the SIMS profile was observed after annealing over 710 °C, suggesting the presence of two different diffusion mechanisms. Diffusivities were found to be in excess of the bulk diffusivity and were concentration dependent above n(Sb)≈5×1017 cm−3. Asymmetric diffusion of ALD Sb in the epitaxial layers and Sb segregation at the oxide interface were also observed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104348

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