ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We used 2 MeV 4He backscattering spectrometry, x-ray diffractometry, and the van der Pauw technique to study how epitaxial ReSi2 films on Si(100) change structurally and electrically upon room-temperature implantation of 300 keV 28Si or 380 keV 40Ar. The as-grown film has a minimum channeling yield of ∼2% for Re, and a resistivity of ∼23 mΩcm at room temperature. Ion implantation produces damage in the film, which increases monotonically with dose. At a dose of either 5×1014 28Si/cm2 or 1×1014 40Ar/cm2, the entire ReSi2 film becomes both x-ray and channeling amorphous. The resistivity of the film decreases monotonically with dose. The amorphous film has a resistivity of ∼1.2 mΩcm at room temperature. Upon annealing in vacuum at 700 °C for 30 min, the damage anneals out and the amorphous ReSi2 film recrystallizes epitaxially, once again exhibiting a minimum channeling yield of ∼2% for Re and a resistivity of ∼23 mΩcm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105062
