Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1816-1818
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using solid source molecular beam epitaxy we have grown strained layer InGaAs/AlGaAs graded index separate confinement heterostructure lasers operating at 1.01 μm. For broad-area, uncoated Fabry–Perot devices with cavity lengths in excess of 3000 μm, the threshold current density is 56 A/cm2, a value which we believe to be the lowest ever reported for laser diodes in any materials system. The internal quantum efficiency for these lasers is 88%, while the materials losses are 1.8 cm−1.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105098
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