Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1952-1954
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Strain-compensated strained-layer multiple quantum well structures have been grown by introducing opposite strain into the barrier layers. Such structures show significant improvement in the photoluminescence spectra, i.e., narrower full width half maxima and stronger intensities. Lasers fabricated with such structures have exhibited low current thresholds (12 mA), high quantum efficiencies (28% per facet), which are constant over a wide current range.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105029
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