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Transit time limited response of GaAs metal-semiconductor-metal photodiodes (1991)

Klingenstein, M. ; Kuhl, J. ; Rosenzweig, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 2503-2505

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The response of GaAs metal-semiconductor-metal (MSM) photodiodes at low temperatures has been investigated in the time domain by photoconductive sampling. The dependence of the response time on temperature for T(approximately-greater-than)50 K can be described by phonon mediated intervalley and intravalley scattering. The pulse width drops from 10.8 ps at 300 K to 5.6 ps at 70 K and then grows rapidly with decreasing temperature below 50 K. These results demonstrate that the response is limited by the electron/hole transport in the semiconductor rather than by external capacitances or inductances.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104857

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