Electronic Resource
Deri, R. J.
;
Doldissen, W.
;
Hawkins, R. J.
;
[et al.]
Bhat, R.
;
Soole, J. B. D.
;
Schiavone, L. M.
;
Seto, M.
;
Andreadakis, N.
;
Silberberg, Y.
;
Koza, M. A.
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 2749-2751
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate vertical integration of InGaAs mesa photodiodes with InGaAsP rib waveguides employing an intermediate optical impedance matching layer. The diode length necessary for 90% light absorption at 1.52 μm wavelength was 42 μm, a threefold reduction in diode length with respect to previous work employing similar waveguides without a matching layer. The quantum efficiency was observed to be almost independent of the optical wavelength and polarization. The influence of spatial transient intensity redistribution effects on these devices is investigated in detail.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104774
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