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Selective amorphization of ion-bombarded SiGe strained-layer superlattices (1991)

Vos, M. ; Wu, C. ; Mitchell, I. V. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 951-953

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Si/SixGe1−x multilayers were implanted with Si ions of 540 keV at doses between 1.0×1014 and 2.5×1015 ions/cm2. Channeling spectra were taken using 3 MeV B++ ions. These measurements showed a rapid increase of the Ge minimum yield with implantation dose. The increases were paralleled by a growth of disorder peaks in those parts of the Si backscattering spectrum corresponding to the SixGe1−x layers. After 1.2×1015 Si ions/cm2 the SiGe layers were completely amorphized. Cross-sectional transmission electron microscope pictures confirmed the selective amorphization of the SiGe layers. Annealing of an irradiated sample resulted in recrystallization of all the amorphous layers in the 450–550 °C temperature range.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104488

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