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Raman intensity enhancement of the Si peak by CdS thin films (1991)

Dai, C. M. ; Chuu, D. S. ; Hsieh, W. F.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 3273-3275

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A method, which utilizes interference enhanced Raman scattering and resonant Raman scattering techniques, is used to overcome the low efficiency of Raman methods to diagnose highly reflective materials. As applied to the p-type Si wafer, the enhanced gain is up to nearly a factor of 80 at 4880 A(ring) excitation. Because of the strong absorption of the scattered light, it is recommended that the suitable deposited thickness of CdS films should not be thicker than 700 A(ring).

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105728

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