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Temperature and intensity dependence of the saturated density of light-induced defects in hydrogenated amorphous silicon (1992)

Hata, N. ; Isomura, M. ; Wagner, S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 1462-1464

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We compare experimental data for the saturated light-induced defect density Nsat in hydrogenated amorphous silicon with results obtained by a quasi-equilibrium model. If the model draws on a limited pool of defects the results agree with the experimental data, but if the model relies on the conversion of valence-band-tail states they do not. The model reproduces all three regimes of Nsat: a constant, maximum value of Nsat at high carrier generation rate G and low-temperature T; the dependence of Nsat on both G and T at intermediate temperature; and independence of G coupled with dependence on T at high temperature.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.107271

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