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Observation of negative persistent photoconductivity in an n-channel GaAs/AlxGa1−xAs single heterojunction (1992)

Chen, J. ; Yang, C. H. ; Wilson, R. A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 2113-2115

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report the first observation of negative persistent photoconductivity at 4.2 K in an n-channel modulation doped GaAs/Al0.33Ga0.67As single heterostructure, where two-dimensional electrons have a mobility of ∼550 000 cm2/V s when density is ∼3.0×1011 cm−2. Based on extensive magnetotransport measurements, we conclude that the negative persistent photoconductivity effect comes from the time dependence of (1) the annihilation of two-dimensional electrons by photoexcited holes, and (2) the trapping and de-trapping of photoexcited electrons by shallow donors in doped Al0.33Ga0.67As. A model that quantitatively explains the nonexponential recovery time is presented.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.107106

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