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Impact ionization in Ga1−xAlxSb (1992)

Gouskov, L. ; Orsal, B. ; Pérotin, M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 3030-3032

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured impact ionization rates in Ga1−xAlxSb at x=0 and 0.08. For these Al contents, the ratio values of the spin-orbit splitting energy Δ to the energy gap Eg are, respectively, greater and lower than unity. We have determined that the ratio of the ionization coefficients kp/kn is greater than unity for both compositions and that it is much lower (kp/kn≈2) than the value ((approximately-greater-than)10) determined on our layers for x=0.04. Multiplication noise measurements confirm these results. The comparison to other published data show that the ionization in these antimonide compounds is not yet elucidated.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106799

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