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Study of Si(001) 2×1 domain conversion during direct current and radiative heatings (1992)

Ichikawa, M. ; Doi, T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 1082-1084

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Si(001) 2×1 domain conversions induced by sample electric current are observed using microprobe reflection high-energy electron diffraction. Samples are heated by using both direct current and a radiative heater. It is found that diffusion anisotropy of Si adatoms exists on 2×1 surfaces and that the domain conversion velocity is proportional to a voltage applied between the sample edges. This indicates that the conversion process is induced by the diffusion anisotropy and the electric force acting on positively charged adatoms. Minor 2×1 domain terraces always spread when the sample is heated radiatively. This preserves narrow 2×1 and 1×2 domain terraces after the conversion process and during Si growth process.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106451

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