Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 1673-1675
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The homoepitaxial growth of Ge(111) has been investigated with reflection high-energy electron diffraction (RHEED) measurements supported by Monte Carlo simulations. At low temperatures, the RHEED oscillations show a monolayer period, while at higher temperatures the oscillation period becomes bilayer. The simulations reveal that a short-range nonthermal diffusion process is dominant at low temperatures, and that the driving force behind the transition to bilayer growth is the increasing importance of thermal diffusion.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108622
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