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Carbon doping in GaAs layers grown with trimethylgallium and solid arsenic in a mixture of hydrogen and nitrogen (1993)

Peña-Sierra, R. ; Escobosa, A. ; Sanchez-R., V. M.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 2359-2361

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Carbon doped GaAs epitaxial layers have been grown using solid arsenic and trimethylgallium. Carbon incorporation, proceeding from the organic radicals, was found to be dependent on the hydrogen partial pressure. The latter was fixed by the introduction of nitrogen in the carrier gas. Controlled p-doping between 1016 and 1221 cm−3 has been obtained by adjusting the composition of the carrier gas. The growth rate of the layers was found to be reduced by the introduction of nitrogen. Mirrorlike surfaces were obtained if at least 2% hydrogen was mixed in the carrier gas, but only polycrystalline films could be grown in a pure nitrogen atmosphere.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109389

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