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Stability of visible luminescence from porous silicon (1993)

Batstone, J. L. ; Tischler, M. A. ; Collins, R. T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 2667-2669

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The stability of the luminescence from porous Si has been improved by rapid thermal oxidation. As-prepared and oxidized samples have been compared by cathodoluminescence and photoluminescence. Electron beam excitation resulted in rapid decay of the porous Si emission from as-prepared samples. Photoluminescence measurements from as-prepared samples in oxygen showed a similar degradation. In contrast, the rapid thermal oxidized samples showed a dramatic improvement in stability under either electron beam or photoexcitation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109279

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