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Electron transport properties of a strained Si layer on a relaxed Si1−xGex substrate by Monte Carlo simulation (1993)

Miyata, H. ; Yamada, Toshishige ; Ferry, D. K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 2661-2663

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The in-plane transport properties of a strained (100) Si layer on a relaxed Si1−xGex substrate are studied with an ensemble Monte Carlo technique. Similar velocity (-field) characteristics are found for strained Si with any valley splitting energy ΔE≥0.1 eV. These phonon-limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm2/V s at 77 K. There is only a slight increase in the saturation velocity at both temperatures. However, a significant overshoot peak transient velocity is found to depend upon ΔE, and for ΔE=0.4 eV, reaches 4.1×107 cm/s at 300 K, and 5.2×107 cm/s at 77 K.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109278

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