Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 2977-2979
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report significant improvements in the electrical characteristics of Si3N4/Si/GaAs capacitors with the assistance of atomic hydrogen during the in situ growth of Si on GaAs. Si3N4/Si/GaAs capacitors have shown a minimum interface state density as low as 3×1010 eV−1 cm−2 as determined by the low-frequency capacitance method. The hysteresis and frequency dispersion in the GaAs metal-insulator-semiconductor capacitor are very small (200 and 100 meV, respectively). These results represent significant advances over previous reports.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109162
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