ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster [(t-Bu)GaS]4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, x-ray powder diffraction, and x-ray photoelectron and Rutherford backscattering spectroscopies.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108847