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Electronic structure of periodic random superlattice [(GaAs)m/(AlAs)n]l (1993)

Wang, E. G. ; Xu, J. H. ; Su, W. P. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 1411-1413

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The electronic structure of a realistic three-dimensional periodic random superlattice (SL) [(GaAs)m/(AlAs)n]l are calculated for the first time using the large-cluster recursion method within the tight-binding framework. It is found that the localized valance band-tail states of the random SL, which are almost independent of the AlAs concentration, extend to the band-gap region of the corresponding ordered SL. The central peaks in the Al s and Ga s states which vary with the Al concentration are studied, and comparison with the alloy AlxGa1−xAs is made. Our results provide a guide to the band-gap engineering of the random superlattices.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109693

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