ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The evaluation of the defects in fast neutron irradiated semi-insulating GaAs was studied using thermally stimulated current (TSC) and photoluminescence (PL) methods. A new TSC peak is observed at an annealing stage between 550 and 600 °C. This peak is associated with a GaAs-X complex defect, which might include X as the gallium vacancy, according to both the analysis of the activation energy and the annealing behavior of the PL emission. A prominent TSC peak is also observed in as-irradiated samples, showing the creation of an AsGa- VAs complex.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110616