Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 628-630
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half- maximum of 6–11 meV were obtained for the quantum well structures with well thicknesses of 0.35–0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109971
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