ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T(approximately-equal-to)80 K. For an injected carrier density of n(approximately-equal-to)2.2×1018 cm−3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as Vd=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110848