ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter, a new high-resolution technique is presented for determining the lateral extent of oxidation-enhanced diffusion (OED). A periodic grid of lines and spacings is used as an oxidation mask. It will be shown that a simple secondary ion mass spectroscopy measurement permits the extraction of parameters in the lateral direction with a resolution which can be as good as 10 nm. The lateral extent of OED is depth dependent, consistent with a physical model of point-defect recombination at the Si/SiO2 interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111706